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Simulations of the Dependence of Gas Physical Parameters on Deposition Variables during HFCVD Diamond Films

Aiying WANG , Kwangryeol Lee , Chao SUN , Lishi WEN , null , null , null , null

材料科学技术(英)

During the growth of the hot filament chemical vapor deposition (HFCVD) diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal round-flow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth.

关键词: Gas physical parameters , physical , parameters , simulations , di

Simulations of Temperature Field in HFCVD Diamond Films over Large Area

Aiying WANG , Chao SUN , Rongfang HUANG , Lishi WEN

材料科学技术(英)

A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapor deposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filaments number, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filaments arrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76mm×76mm with the temperature fluctuation no more than 5% could be obtained by a 80mm×80mm hot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100mm×100mm under the condition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for specially optimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.

关键词: HFCVD , null , null , null

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